Abstract
The etching process of Porous Silicon has been carried out using an electrochemical oxidation technique. Oxidized samples were immobilized with -Leucine, DL-Iso Leucine and DL-Nor Leucine solutions. Surface morphology and optical properties of the samples have been analyzed using scanning electron microscopy and optical absorption analysis techniques respectively. The bonding characteristics on the surface before and after amino acid deposition have been studied using fourier transform infrared spectroscopy. Photoluminescence spectroscopy was employed to determine the enhancement in wavelength shift of the etched porous silicon.
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