Abstract
In this paper, porous silicon (PS) technology is used to achieve a wide range of high‐quality ZnO nanowires on the porous silicon substrate (PS) with a rough morphology without any catalyst, by a simple thermal evaporation technique. The NPSi have been prepared by electrochemical etching method in the mixture of hydrofluoric acid and ethanol electrolyte using an optimized parameter by the electrochemical anodization method on n‐type Si(100) substrates. The surface morphology, structural quality and optical properties of the samples were examined by scanning electron microscopy (SEM), X‐ray diffraction (XRD), energy dispersive spectroscopy (EDX), and photoluminescence (PL) measurement.
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