Abstract
Remote plasma-enhanced chemical vapour deposition is used in the present study to produce SiO 2 layers with approximately 60% porosity in a planar reactor. Ellipsometric porometry is applied as the main method to investigate the resulting layers. The influence of gas-phase monosilane oxidation stages on the regularity of mesopore formation at temperatures ranging from 17 to 120 °? is discussed. The possibility to obtain layers with the desired porosity by changing the process parameters (pressure, temperature, reactor geometry) is also presented.
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