Synthesis and characterization of Sn-doped β-Ga2O3 nano- and micrometer particles by chemical vapor deposition

Abstract

Sn-doped β-Ga2O3 nano- and micrometer particles have been successfully synthesized by chemical vapor deposition process using CaF2 as dispersant and Ni2+ ions as catalyst. X-ray diffraction indicates that the product was predominantly a single β-Ga2O3 phase with high purity. SEM shows that the product was formed by nano- and micrometer particles with the diameters ranging from 300 to 500 nm. A broad and strong emission band ranging from 300 to 650 nm exists because of larger surface area. The growth process of β-Ga2O3 nano- and micrometer particles agrees with the vapor–solid growth mechanism.