Abstract

The focus of this research is to improve upon the bio-semiconductor technology by considering the use of plant extracts and metallic dopant. The plant was Thaumatococcus daniellii and it was extracted using three different solutions i.e. methanol, ethanol and butanol to form sample 1, sample 2 and sample 3, respectively. The plant extract was doped with aluminium under room temperature and pressure. The samples were characterized using UV–Vis spectrometry. It was observed that the chemical reaction of the oxide layer growth pattern varied significantly in all samples considered. Hence, the more stable the growth of the oxide layer, the more d-d transitions expected. These results are also unconnected to the inherent chemical components of Thaumatococcus daniellii that allows for the quick release of π-electrons to the aluminium atom. The band gap of sample 1, sample 2, and sample 3 was calculated as 1.6 eV, 2 eV and 2 eV respectively. There were 3 d-d transitions in the ethanol extract at wavelength λ = 612 nm, λ = 485 nm & λ = 460 nm while there 4 d-d transitions in butanol extract.

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