Abstract
Zinc oxide thin films doped with cerium were synthesized through facile spray pyrolysis technique and subsequently characterized via an array of analytical methods, including X-ray diffraction, ultraviolet-visible diffused reflectance absorption spectroscopy, photoluminescence, scanning electron microscopy and energy-dispersive X-ray spectroscopy techniques. The operative mechanism of the semiconductor metal oxide gas sensors is predicated on the modulation of electrical conductivity in response to varying gaseous atmospheres, under the influence of disparate thermal conditions. The nitrogen dioxide gas-sensing performance of the films demonstrated a noteworthy gas response of 18% at an elevated temperature of 400°C for a concentration of 100 ppm, accompanied by rapid response and recovery times of 23 and 60 s, respectively.
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