Abstract
Cadmium Sulphide (CdS) [II-VI group n-type semiconductor] and Copper Sulphide (Cu2S) [I-VI group p-type semiconductor] have large commercial applications like solar cell, gas sensor etc. Wide band gap CdS semiconductor was used as the transparent window material together with narrow band gap Cu2S semiconductor used as the absorber layer. Thioglycerol capped CdS and Cu2S nanoparticles were synthesized by using the non-aqueous chemical method at room temperature. CdS and Cu2S films were prepared on fluorine doped tin oxide (FTO) glass substrates by using the simple dip coating method at different dip times and heat treated in air. CdS and Cu2S nanoparticles were analysed by Ultraviolet-Visible absorption spectroscopy, photoluminescence (PL) and transmission electron microscopy (TEM). CdS and Cu2S films were investigated by scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDAX), mapping and atomic force microscopy (AFM). Thicknesses of films were determined using laser profilometer. Previously, preparation of solar cells using CdS and Cu2S films deposited by dip coating method has not been reported. In this study, thin-film solar cells with p-n heterojunction having enhanced conductivity, excellent solar energy conversion efficiency, enhanced fill factor, low cost and easy fabrication were prepared to increase the quality of solar cells.
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