Abstract
In this work, synthesis and characterization of Al2O3, TiO2and Al2O3 / TiO2hyper thin films, with 25 nm and 50 nm,have been investigated by using Atomic layer deposition method (ALD) at high vacuum (0.27 Torr) onto the cobalt chromium alloy (ASTM F75) and si-wafer (100) substrates. The characterizationshave been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), optical profilometer and ellipsometry spectroscopy. Morphological characterization and thickness evaluation has been obtained by optical profiler and ellipsometry spectroscopy respectively. SEM has been used to find the presence of thin film defects and the particle shape/size of the thin films. EDX has been used to obtain the element analysis of the thin films. The results have shown good quality thin films, homogeneity, without defects or micro-crack and good thin films properties. Small crystalline regions have been found in the TiO2thin film by selected area diffraction pattern(SADP) image. Al2O3ALD film exhibited lower surface roughness values and good thin film thickness control compared with TiO2and Al2O3 / TiO2.
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