Abstract
The present work includes the fabrication of Mg0.4Ti0.6O2 thin film (TF) based Metal-oxide–semiconductor (MOS) capacitor on (100) n-type GaAs substrates by electron beam evaporation technique. The thickness of the thin film alloy is found to be about 300 nm measured from Field emission gun-scanning electron microscope (FEG-SEM) data. The pore volume, surface roughness and grain size of the thin film samples are calculated from non-contact atomic force microscopy (NC-AFM) images. Experimental as well as analytical studies have been carried out to determine the bandgap and defect level transition of the material. The band-to-band transition of the Mg0.4Ti0.6O2 sample is calculated to be at ~ 5.2 eV. The as prepared sample shows tetragonal crystal structure. Presence of anatase phase of TiO2 in the TF material is confirmed through XRD (X-ray diffraction) investigation. Current (I) – Voltage (V) characteristics of the Mg0.4Ti0.6O2 Schottky devices reveal that the leakage current at −1 V is 8.1 × 10-4 A.
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