Synthesis and characterization of graphene oxide as dielectric material for parallel plate capacitor

Abstract

Graphite acts as an electrical conductor due to the delocalization of electrons between the surfaces. Graphene oxide (GO) is produced by using graphite via the Hummers method. Reduced GO (rGO) is a form of GO where the oxygen content has been reduced due to chemical, thermal, and other processes. In this study, we have produced a prototype of capacitors containing the synthesized rGO with variation of the rGO mass, i.e.: 0 g., 0,2 g; and 0,8 g. Than we compare the capacitance values obtained from the capacitors using a multitester. Characterizations of the rGO are conducted using XRD, UV-Vis, and FTIR. The results of the UV-Vis test show peak at a wavelength of 300 nm indicating absorption of rGO. The XRD test shows a transition from GO to rGO in an amorphous phase. Finally, the FTIR tests produce transmittance bands from the functional groups of CO2, CO, and OH. This paper shows that the capacitance values of the capacitor using rGO material is greater than using graphite material. It means that rGO is capable of storing more charges than graphite. The highest capacitance value is obtained for the capacitor with 0.2 g rGO, i.e.: 165,02 µF.