Synthesis and characterization of GeO2 microclusters via electrochemical deposition technique

Abstract

Research on heterogeneous integration system implementation for high-performance and low-power large scale integration (LSI) is in great demand and continues to grow. The co-integration of alternative materials such as Ge and III-V channels on Si substrate is essential in order to fully utilize the conventional Si CMOS platform. Thus, it opens up the feasibility of advance device technologies along with More-Moore, More-than-Moore and beyond-CMOS approaches [1]. In the family of Ge, GeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> has been proven to exhibit many interesting properties such as higher refractive index, high dielectric constant, thermal and mechanical strength [2–4] for applications in optical, electronic, and optoelectronic devices [3–5]. GeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> synthesis has been reported by many workers using physical evaporation or thermal oxidation methods [2, 3]. A simple and low cost method is presented.