Abstract
Al–N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT) homo-buffer layer. The influence of HT buffer layer deposition time (Tht) on film properties was investigated by X-ray diffraction (XRD), scanning electron micro-spectra (SEM) and Hall measurement. The Al–N codoped ZnO film was improved evidently in its crystal quality by varying the value of Tht. Results of Hall effect showed that all of the Al–N codoped ZnO thin films were p-type conduction and had resistivity mainly below 50Ωcm. The optimum deposition time of HT buffer layer is around 3min from the comprehensive consideration of structural, electrical, and optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO.
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