Abstract
Ge[111] was implanted with Fe ions with an energy of 60 keV at various ion fluences. The structuralproperties were characterized by Raman scattering and grazing incidence x-ray diffraction(GIXRD) measurements. Raman scattering reveals the amorphization of Ge at a fluence of5 × 1015 ions cm−2. With further irradiation, a TO-like phonon mode evolves and the full-widthat half-maximum (FWHM) of this mode increases with fluence. The amount ofbond disorder was estimated from the FWHM of the TO-like phonon mode. Thea-Ge is recrystallized by ion beam annealing of the sample at250 °C with 1 MeV Ge+ ions. The GIXRD measurements also support the amorphization and crystallization of Ge.The presence of Fe nanoclusters was observed in implanted samples by using low-frequencyRaman scattering (LFRS). The formation of Fe nanoclusters is attributed to theirradiation process itself and thermal or radiation enhanced diffusivity is absent.
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