Abstract
Natural-superlattice-structured ferroelectric thin films, Bi 3TiNbO 9–Bi 4Ti 3O 12 (BTN–BIT), have been synthesized on Pt/Ti/SiO 2/Si by metal organic decomposition (MOD) using BTN–BIT (1 mol:1 mol) solution. BTN–BIT films show natural-superlattice peaks below 2 θ = 20° in X-ray diffraction patterns, which indicate that the BTN–BIT films annealed at 700–800 °C in O 2 ambient are consisted of iteration of two unit cells of Bi 3TiNbO 9 and one unit cell of Bi 4Ti 3O 12. As the annealing temperature increases from 600 to 750 °C, uniform and crack-free films, better crystallinity and ferroelectric properties can be obtained, but the pyrochlore phase in BTN–BIT films annealed over 800 °C would impair the ferroelectric properties. With the increase of O 2 flow rate from 0.5 to 1.5 L/min, both remanent polarization P r and coercive electric field E C increase, which are mainly attributed to reduction of the vacanvies of Bi and oxide ions in the films. Natural-superlattice-structured BTN–BIT thin films having 2–1 superlattice annealed at 750 °C in O 2 ambient with a flow rate of 1.5 L/min exhibit superior ferroelectric properties of P r = 23.5 μC/cm 2 and E C = 135 kV/cm.
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