Abstract
Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu2ZnSnSe4 films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu2ZnSnSe4 thin films was studied. Our results indicate the possibility of replacing the Se2 selenisation with a thermal treatment in an SnSe2 atmosphere to avoid the selenisation of the Mo substrate and MoSe2 formation. This SnSe2 treatment forms p-type Cu2ZnSnSe4 films with an optical band-gap of 1.14eV and a solar cell structure with an efficiency of up to 3%.
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