Abstract
ZnS is a promising II-VI semiconductor with wide applications in optoelectronic devices. We report the synthesis of nanostructured ZnS thin film by chemical spray pyrolysis (CSP). Previous reports on ZnS thin films prepared by spray pyrolysis have been found to be of cubic structure at deposition temperatures below 500°C. Here we report the synthesis of ZnS thin film with hexagonal structure at a deposition temperature of 350°C. XRD result showed that the film was hexagonal in structure with average grain size 20nm. From the absorption studies the band gap was found to be 4.04eV.
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