Abstract
We have synthesized the resistance-controlled Ga-doped ZnO nanowires employing self-designed hot-walled pulsed laser deposition, and investigated the status of the Ga-doping highlighting the chemical structure change, the stack-structured morphology, and the optical property of the nanowires. Especially the chemical structure is quantitatively evaluated, verifying that the substitutional Ga atoms and oxygen vacancies are proportional to the Ga-doping concentration. The resultant data of the controlled resistance ranging from 1.6 to 70 MΩ are presented.
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