Synthesis, analysis and electrical properties of silicon doped BN nanowires

Abstract

Element doping of one dimension BN nanomaterials enables great improvement of electrical properties and then broaden their application in nanoelectronic and optoelectronic fields. Silicon as a well-informed material widely used in electronics offers a promising direction for doping BN nanomaterials. Si-doped BN nanowires (BNNWs) and BN nanotubes (BNNTs) were synthesized through a ball milling-annealing approach. Interestingly, the Si doping transfers the BNNWs and BNNTs from insulators to semiconductors. And these BN nanomaterials present typical semiconductor characteristic which were studied using an electrical parameter analyser HP4145 and probe station at room temperature. Since the improvement of electrical properties, these nanomaterials will be able to extend their applications in designing and fabricating electronic nanodevices.