Abstract
Reactive high-power impulse magnetron sputtering of tungsten oxide films using metallic tungsten target (72 mm in diameter) in argon-oxygen atmosphere (total pressure of 0.75 Pa) was carried out. The effect of various discharge parameters on the deposition rate and film oxygen concentration was investigated. Moreover, a model combining a reactive high-power impulse magnetron sputtering model and a discharge plasma model for the ionization region was successfully used for deeper insight into the effect of particular discharge parameters such as voltage pulse length (from 100 –800 µs), oxygen partial pressure (from 0.25–0.50 Pa) or the value of pulse-averaged target power density (from 2.5–500 W cm−2). The results of the presented model, most notably trends in the target- and substrate oxide fraction, composition of particle fluxes onto the substrate, degree of W atom ionization or degree of O2 molecule dissociation are discussed and put into context with experimentally measured quantities.
Highlights
In the field of thin-film research and development, reactive high-power impulse magnetron sputtering (r-HiPIMS) has become the centre of attention in recent years
We discuss the different behaviour of the reactive DC and HiPIMS processes
The presented results show the successful application of a model combining an r-HiPIMS model with a discharge plasma model for the ionization region (IR)
Summary
In the field of thin-film research and development, reactive high-power impulse magnetron sputtering (r-HiPIMS) has become the centre of attention in recent years. This is thanks to the ability of this technique to produce densified, high-quality defect-free oxide, nitride and oxynitride coatings [1,2,3,4,5,6]. Some of those models simulated mainly the composition of the reactive surfaces and the balance of RG in the discharge chamber and the hysteresis effect [17, 20], while another focused on the simulation of the
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