Abstract
Synergistic effects of Al2O3 capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO2 thin films were investigated. The use of an Al2O3 capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO2 thin films, leading to a net remnant polarization (2Pr) of >20 μC/cm2 when deposited <260 °C. The HfO2 thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10−6 A/cm2 at an electric field of 2 MV/cm, accompanied by a high 2Pr and an endurance of >107 cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO2 thin films by means of the Al2O3 capping process.
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