Abstract
Herein, synergetic magnetoresiatnce of topological insulators such as Bismuth Selenium (Bi2Se3) and Bismuth Oxygen Sileneium (Bi2O2Se), and GF is discussed in detail. Both, Bi2Se3-GF and Bi2O2Se-GF, are fabricated in Chemical Vapor Deposition (CVD) under argon and air atmosphere, respectively. The highest positive MR ∼250% is detected under a magnetic field ∼5 T and temperature ∼5 K in Bi2Se3-GF sample compared to Bi2O2Se-GF. The presence of oxygen in Bi2Se3 to form Bi2O2Se significantly reduced the magnitude of MR and linear MR might be due to the mobility fluctuation.
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