Abstract
Thermally oxidized thin films grown on Si(001) were analyzed with synchrotron x rays. By looking at crystal truncation rod (CTR) profiles we were able to observe, as have others, a crystalline peak, nominally along the (1 1 L) rod, together with Laue oscillations matching the film thickness. These oscillations are evidence of a crystalline component present throughout the entire film that vanishes away from the interface with the silicon substrate. A model consisting of distorted coesite is proposed to explain the results.
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