Synchrotron Section Topographic Study of Czochralski‐Grown Silicon Wafers for Advanced Memory Circuits

Abstract

Silicon wafers especially prepared to meet a customer's needs in the production of semiconductor memory circuits are studied with synchrotron section topography. A well‐defined uniform denuded zone below the surface with a width of 12 to 24 μm is observed. The concentration and the size of the oxygen‐related defects in the bulk are independent of the location along the crystal ingot, from which the wafer originates, and of that along the wafer diameter.