Abstract
Abstract The photoluminescence of porous silicon (PS) layers boron doped is enhanced by anodic oxidation, which gives rise to an electroluminescence phenomenon in the visible range. The anodic oxidation effects on the structural properties of PS are reported, studying the Bragg peaks and the diffuse scattering by means of X-ray diffraction using synchrotron radiation. The decrease of coherent and diffuse scattering intensity close to the Bragg peaks for an oxidized sample is associated to an increase of the scattering intensity in the whole reciprocal space. At small angle values, an isotropic bump is observed which corresponds to the presence of a thin SiO 2 layer at the crystallites surface.
Published Version
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