Abstract
The GaAs lateral-epitaxial growth mechanism on insulators is studied synchroton radiation photoemission spectroscopy on Ga-insulator interfaces. Interfacial reaction is compared with surface migration of deposited atoms and clusters. Surface sensitive PES results indicate that only Ga deposited on TiO 2 among Sm 2O 3, MgO, Al 2O 3 TiO 2, SiO 2 and Ta 2O 5 is heavily oxidized, and that interfacial TiO 2 is strongly reduced to Ti metal. The growth model is also discussed based on the chemically shifted PES peaks and TEM images of Ga islands. In comparison with the MOCVD GaAs lateral growth rate on these insulators, a close correlation of the surface migration rate of GaAs precipitates with the interfacial reactivity is obtained. A special surface treatment to decrease the surface oxygen on insulators is useful to diminish the Ga-insulator interaction.
Published Version
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