Abstract
The influence of air and near bandgap laser irradiation on the surface structure of As40Se60 nanolayers has been investigated by synchrotron radiation photoelectron spectroscopy (SRPES). The As 3d and Se 3d photoemission peaks of the irradiated sample show significant differences in shapes and positions in comparison with those obtained for non-irradiated amorphous films. The experimental data processing and quantification were performed by analyzing As 3d, Se 3d, C 1s and O 1s core-level components obtained by curve fitting. The relative contribution of the As, Se, C and O atoms in different chemical states to the whole As 3d, Se 3d, C 1s and O 1s signals, its structural origins as well as their relation to the As40Se60 surface and subsurface nanolayers structure before and after laser irradiation is analyzed and discussed in detail. An atomic model of induced structural changes on the surface of As40Se60 nanolayers under ambient conditions and after laser irradiation in air is proposed.
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