Abstract
In this paper, we proposed a gate-all-around InAs nanowire field effect transistor (GAA InAs NW FET) that can simulate synaptic behaviors such as short-term potentiation (STP) and long-term potentiation (LTP). The native oxide layer (In2O3) on the surface of InAs NW serves as a charge trapping layer for storing information. The transition from short-term potentiation (STP) to long-term potentiation (LTP) can be achieved by properly adjusting the gate voltage. Due to enhanced gate controllability, the GAA InAs NW FETs are expected to be widely used and promising in neuromorphic systems and networks.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
