Abstract
Vertical (011)-oriented parallel mirror facets as smooth as cleaved ones were obtained by selective chemical beam epitaxy (CBE) on both sidewalls of [011]-direction ridges formed by reactive ion etching (RIE) on a (100) InP substrate. The obtained vertical facets often had a symmetric shape on the both sidewalls of the ridge, which was required to use as Fabry-Perot mirrors in a semiconductor laser, although an asymmetric shape had been often obtained before optimizing the growth conditions. We clarified the cause of asymmetry using simulation of the flux distribution on the sidewalls of the ridge during growth, and found the optimum growth conditions to obtain symmetric and parallel mirror facets.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
