Symmetric dual gate insulator‐based FinFET module and design window for reliable circuits

Abstract

High-k spacer and gate insulator materials have been exhaustively studied nowadays for the enhancement of electrostatic control and reduction of short-channel effects in scaled devices. The work presents a high-performance and charge trap tolerant FinFET module at 10 nm gate length. Dual layer gate insulator (inner low-k and outer high-k) introduces to reduce charge trapping from the channel and outside into the gate oxide. It reduces the gate leakage current by 51.6% compared to conventional FinFET. Further, they demonstrate single charge trapping (SCT) induce effects and proposed optimised high-k spacer width of the SCT tolerant design. SCT analysis is presented in different high-k spacer materials and back-gate voltages. Process variation sources such as line edge roughness and line width roughness are also analysed for the circuit design.