Symmetric bipolar resistive switching in copper oxide nanostructure/ITO lateral device under exposure to atmospheric oxygen and application in artificial synaptic devices

Abstract

Capacitively coupled resistive switching behaviour was observed in a planar-geometry two-terminal device based on nanostructures of copper oxide as active material and indium tin oxide (ITO) as electrodes. When tested in ambient atmosphere, current-voltage I−V characteristic was found to be symmetric with pronounced hysteresis loop signifying two different states of resistance, namely the low resistive state (LRS) and high resistive state (HRS). Capacitive effect was apparent in the low voltage regime due to the presence of offset voltage at zero current and offset current at zero bias. X-ray photoelectron spectroscopy (XPS) analysis confirmed the presence of native oxygen vacancies in copper oxide. Additionally, exposure to atmospheric oxygen played the dominant role in creation of excess vacancy sites by electrochemical reaction near positive electrode. Creation of excess density of oxygen vacancy near the electrodes in conjunction with trapping and detrapping of electrons from these defect sites is perceived as the prime mechanism for the observed switching behaviour. The device ON/OFF ratio, ION/IOFF∼1.5 was found to be stable over at least 100 continuous cycles. When tested under vacuum, the device I−V characteristics was linear in shape without any hysteresis signifying ohmic transport. Analysis of ultraviolet photoelectron spectroscopy (UPS) showed the Fermi energy level of copper oxide is at ∼ 4.69 eV, which is in a close match with the work function of ITO-electrode. The essential synaptic characteristics such as learning and forgetting curves and paired pulse facilitation (PPF) are established. The nonlinearity factors (NLF) are very low indicating the copper oxide-based devices are promising candidates for neuromorphic applications.