Abstract
Optical experiments on electric-field-tunable AlAs/GaAs heterostructures demonstrate that the optical nature of these structures can be directly controlled by an applied electric field. We present calculations performed within the tight-binding supercell formalism, taking into account the effects of the heterostructure geometry and of the external uniform electric field. We describe the temporal and spatial evolution of the relevant electronic states. The electric-field intensity needed to cause the indirect–direct transition is obtained in good agreement with the experimental results for comparable heterostructure geometry. We present simple and reliable expressions to estimate the switching time scales involved in such processes.
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