Abstract
Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature 4H-SiC devices for high power/temperature and switching application. In this paper, switching characteristics of TI-VJFETs have been studied using 2D Sentaurus TCAD with variation of gate-drain capacitance (1∼50 pF) and temperature (RT∼200°C). It was found that switching time and energy losses increase with increase in gate–drain capacitance while as temperature increase from 25°C to 200°C, turn-on and energy loss (3∼ 5ns & 1.8∼3μJ) increase while turn-off and energy loss (9∼6ns & 5.4 ∼3.6μJ) decrease.
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