Abstract
Exchange-coupled double layers were prepared by RE sputtering and their temperature-dependent magnetization reversal behaviour was investigated by Kerr and VSM measurements. The switching field data were used to deduce the general magnetization reversal behaviour of antiparallel and parallel coupled double layers. With respect to application, a formalism based on the switching-field diagram was developed, which allows testing of the direct overwrite (DOW) or the magnetically induced superresolution (MSR) capability of MO media by using data obtained from Kerr measurements only. As an example, the formalism is applied to a double layer structure to test the writing performance of the DOW process.
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