Abstract
Next generation of power semiconductor devices will be designed and optimized to meet the specific application requirements. Mixed-mode simulations are used to study the carrier dynamics in punch-through and nonpunch-through Insulated Gate Bipolar Transistor (IGBT) structures during soft- and hard-switching conditions. The simulation results are shown to qualitatively predict the measured bump in the tail current with varying output dv/dt conditions and excessive forward conduction voltage under varying di/dt conditions. A new physical effect termed modulation lag is shown to occur during turn-on under soft-switching conditions. This mechanism is caused by the fact that minority carrier injection into the base of the bipolar transistor significantly lags behind the rate at which drift region conductivity can be modulated. The proposed phenomenon leads to an inductive effect that results in dynamic voltage saturation during turn-on and causes excessive forward voltage drop. >
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