Switching comparison of generation 1 and generation 2P-MCTs and ultrafast N-IGBTs

Abstract

Measurements have been made evaluating the switching and conduction characteristics of the first commercially available 600-V MCT (MOS controlled thyristor), the second-generation, 600-V MCT still under development, and a fast commercially N-IGBT (insulated-gate bipolar transistor). The data presented indicate that great strides have been made in improving the electrical performance of the P-MCT in the generation 2 device. Using the fmax curve as a figure of merit, the lower switching losses of the N-IGBT are favorable, under the test conditions used, compared to the generation 1 P-MCT up to approximately 50 A. The lower conduction losses of the MCT become the predominant factor for larger current levels. The generation 2 P-MCT combines the same conduction loss characteristics as its predecessor, with drastic reductions in turn-off switching times and losses. The combined effect gives the generation 2 P-MCT the lowest losses over the whole current and frequency range evaluated. The N-IGBT provides a better safe operating area than either of the P-MCTs, though capacitive snubbers can be employed to improve this situation. >