Abstract
One diode-one resistor (1D1R) memory array consisting of Pt/TaOx/Al memory element and GaAs selection diode was firstly demonstrated. The resistive switching behavior of the memory devices with variety of active areas from 5 μm to 50 μm has been investigated. It was found that the forming voltage decreases with the memory element being scaled and the voltage value was in a range of 3 – 11.5 V. The reset current was in range of 3.6 – 11 mA range. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) fluctuates between 102 – 106. The data retention performance in 1×105 s was evaluated for maintaining resistance ratio between HRS and LRS. For a 10% readout margin in an N × N crossbar array, the maximum array size for the 1D1R with diameter of 5 μm in each single cell was estimated to ∼4.5 × 103 and it could be further expanded with improved forward-to-reverse resistance ratio (RLRS_R/RLRS_F).
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