Abstract
This paper describes switching characteristics of a thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the results of numerically simulating thin-film SOI power MOSFETs in the 50-V class. The dependence of the rise time and fall time on the doping concentration of the substrate, on the doping type of the substrate, and on the thickness of the buried oxide layer are studied. In addition, the optimum device structure of the thin-film SOI power MOSFET for high-frequency switching application is also described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
