Abstract
The static current-voltage (I-V) characteristics of a diamond Schottky barrier diode (SBD) have been previously studied. This paper experimentally studies the switching characteristics of a diamond SBD in comparison with the characteristics of a silicon carbide (SiC) SBD. The forward conduction current and the reverse bias voltage dependency of the reverse recovery phenomenon during the fast-switching operation of an SBD are evaluated. The experimental results validate the majority carrier device characteristics of the diamond SBD under study. The results indicate the feasibility of using a diamond device in a power conversion circuit.
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