Abstract
The pre-switch and switch characteristics of an amorphous semiconductor film are experimentally examined. The fact that the field-dependent mobility is dominant in the pre-switch characteristics, is confirmed from the measurements of drift mobility and the transient I–V characteristics. Examining the switch characteristics with respect to the dependence of the film thickness and the light illumination effect, it is found that the switching occurs in the vicinity of metal-amorphous semiconductor interface. The pulse measurement of the threshold voltage shows that the storage of a certain amount of injected carriers in the film is required for the initiation of switching. These results can be explained on the basis of the mobility-gap switching model.
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