Abstract
Abstract A model based on a band picture of trap controlled mobility is proposed to explain the field dependent drift mobility observed in some amorphous semiconductors. A field dependent mobility is predicted when the Schubweg of the carrier is made smaller than the sample thickness. The model is applied to the published results on amorphous Se and an exponentially decreasing density of states in the valence-band-tail is determined. A fairly consistent fit of the data to the theory is obtained for all experimental results.
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