Abstract
This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn1/3Nb2/3)0.91Ti0.09O3 (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signified the relaxer-type behavior of the sample. The value of the relaxation parameter γ = 1.48 was estimated from the linear fit of the modified Curie-Weiss law, indicating the relaxer nature. High-temperature dielectric relaxation behaviors were revealed in the temperature region of 400–650 °C. In addition, under the measuring frequency of 10 kHz, εr was tunable by changing the electric field and the largest tunability of εr reached 14.78%. At room temperature, the high pyroelectric coefficient and detectivity figure of merit were reported.
Highlights
With flash memory approaching its scaling limit, the research and development of memory are urgent
A resistance switching random access memory (RRAM) device is basically a two-terminal resistor device and it is attractive for its high speed, improved endurance, retention and excellent scalability for use in low-power nonvolatile memory applications
Park and Shrout reported that (1 − x)Pb(Zn1/3 Nb2/3 )O3 –xPbTiO3 single crystals were near the morphotropic phase boundary (MPB) when the value of x was about 0.09 [27]
Summary
With flash memory approaching its scaling limit, the research and development of memory are urgent. Park and Shrout reported that (1 − x)Pb(Zn1/3 Nb2/3 )O3 –xPbTiO3 single crystals were near the morphotropic phase boundary (MPB) when the value of x was about 0.09 [27]. They pointed out that (Pb(Zn1/3 Nb2/3 )0.91 Ti0.09 O3 (PZNT) single crystal exhibited two main phases: a rhombohedraltetragonal ferroelectric (FE) phase between room temperature and 180 ◦ C, and a cubic paraelectric (PE). The resistance switching characteristics and mechanism were discussed, and the high-temperature dielectric relaxation phenomenon, the dielectric tunability and the pyroelectric properties of the (100)-oriented PZNT single crystal were reported
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