Abstract
The transient response of p-n junctions when switched-on in the forward direction is analyzed in this paper. This transient is complimentary to that analyzed by Lax and Neustadter and by Gossick. When a p-n junction is switched on in the forward direction, nonideal switching characteristics are produced—the transient voltage across the device has finite rise time and decay time. This transient appears capacitive at small signals and inductive at large signals. These nonideal switching characteristics have been explained by the present analysis. Excellent agreement is obtained between theory and experiments for an example diode (1N91). The basis for this analysis is the inclusion of the voltage drop across the bulk material of the base region. In other words, the effects of conductivity modulation are analyzed and added to the junction voltage. It is found that nearly ideal switching characteristics can be obtained if the applied signal is approximately I0, which is given by the intersection of the quiescent base-resistance Rir on the diode dc characteristic.
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