Abstract
In this work, we report a detailed study of the switch-off transients of the drain current in floating-body partially depleted (PD) SOI MOSFETs. When operated in the kink region and at frequency in the MHz range, floating body effects improve the current capability of these devices. However, we point out a serious drawback, that has been previously overlooked: the same effects lead to orders of magnitude increase of the off-state leakage current calling for a trade-off between speed and power dissipation.
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