Abstract
Highly c-axis oriented, magnetoresistive thin films of La 0.7Sr 0.3MnO 3 deposited on LaAlO 3(1 0 0) (LAO) substrates by pulsed laser deposition have been subjected to thermal annealing and subsequently to irradiation with swift heavy ions. While the as-deposited films show insulator metal transition T p at ∼265 K, the annealed films show metallic behavior over a wide temperature range viz. from 125 K to 400 K. We have investigated the effect of 90 MeV O 7+ ions and 200 MeV Ag 15+ ions on structural and electrical properties of these films. Dose values ranging from 1 × 10 12 to 1 × 10 14 ions/cm 2 of O 7+ ions and from 1 × 10 11 to 1 × 10 12 ions/cm 2 of Ag 15+ ions were used. The metal–insulator transition reoccurs in the irradiated films and the T p can be tailored to room temperature with irradiation dose value and energy of the ion. Attempt is made to comprehend this variation in T p on the basis of swift ion irradiation induced defects and related strain rather than change in oxygen content of the films.
Published Version
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