Abstract
AbstractThe microwave transmission properties of suspended, quasi‐metallic individual single‐walled carbon nanotubes (SWCNTs) with a bottom gate field‐effect transistor (FET) configuration have been investigated up to 10 GHz by standard two‐port S‐parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission‐line test fixture is designed to overcome the parasitic and mismatch issues. An open‐through de‐embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high‐frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.
Published Version
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