Abstract
In support of the continuing quest of combining i.r. detectors and silicon electronics on a single substrate, an experimental survey was made of doping candidates for use in the 2–2.7 and 3–5 μm i.r. spectral ranges. The elements beryllium, copper, zinc, nickel, thulium and ytterbium were explored for applicability. Measured spectral response curves and the dependence of detectivity on temperature are presented and compared, where applicable, with theory. Various useful attributes of some of these dopants (Si:Cu, Si:Zn) including higher operational temperatures as well as the observed limitations are discussed and critiqued against the Si:In, Si:S and Si:Tl detectors previously investigated for the 3–5 μm range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
