Abstract
Using atomic force microscopy and scanning electron microscopy, we demonstrate that a Co epitaxial film surface grown on S-passivated GaAs(001) is smoother than one grown on bare GaAs(001) and establish that the surfactant nature of sulfur plays a vital role in the formation of a smooth surface. Synchrotron radiation photoemission spectroscopy results confirm that S passivation greatly reduces the segregation of substrate atoms during film growth on a S-passivated surface. It was also found that methanol rinsing after chemical S passivation provides an even smoother surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
