Abstract
Al- and N-polar AlN have been grown by metalorganic vapor phase epitaxy (MOVPE) with the assistance of In dopant and characterized by in situ interferometry, ellipsometry, scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The growth of Al-polar AlN is faster with smoother surfaces than the N-polar ones, which is explained by theoretical calculations. The surfactant effect of In is confirmed by improving the growth rate and surface flatness without getting into the epilayer. Additionally, In is also favorable for reducing the density of dislocations and improving the crystalline quality, especially that of Al-polar AlN. The results suggest that using In surfactant to grow the Al-polar AlN epilayer leads to a better crystal quality under proper pre-growth treatments, low- and high-temperature AlN growth conditions.
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