Abstract
The effect of arsenic doping on the growth kinetics of ZnO during metalorganic vapor phase epitaxy has been investigated. Arsenic was found to segregate to the growth surface and facilitate layer-by-layer growth. Such surfactant enhances the lateral expansion of the terraces preferential along [1¯1¯20] direction and also reduces the screw lattice distortion. Arsenic is expected to reduce the total surface energy and diffusion barrier of oxygen adatoms, hence producing Zn-rich surface condition on the growth front, in which two-dimensional growth is thermodynamically and kinetically favored. The origin of tiny hexagonal pits formed on the wide terrace is discussed in terms of the modified step-bunching mechanism.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
