Abstract
In this study, we have fabricated OTFTs using poly-3-hexylthiophene (P3HT) as an active layer and SiO2 as gate dielectric layer which was modified by the atmospheric-pressure plasma technology (APPT). Processes of APPT are below 120{degree sign}C and at atmospheric pressure. The effects of surface treatment of SiO2 on electric characteristics of OTFTs were investigated. After surface treatment, the field-effect transistor has a threshold voltage within -10V and a field-effect mobility of 0.02-0.03 cm2/Vs which was 15-fold improvement over the mobility on bare silicon oxide. This study suggests an interesting direction for preparation of high-performance OTFTs with high efficiency and low temperature of surface treatment process by APPT.
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